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W9864G2JH 512k ? ? publication release date: dec. 01 , 2011 - 1 - revision a 0 1 table of contents - 1. general description ................................ ................................ ................................ ......... 3 2. features ................................ ................................ ................................ ................................ . 3 3. available part numb er ................................ ................................ ................................ ...... 3 4. pin configuration ................................ ................................ ................................ ............... 4 5. pin description ................................ ................................ ................................ ..................... 5 6. block diagr am ................................ ................................ ................................ ...................... 6 7. functional descripti on ................................ ................................ ................................ .... 7 7.1 power up and initialization ................................ ................................ ............................. 7 7.2 programming mode register ................................ ................................ .......................... 7 7.3 bank activate command ................................ ................................ ................................ 7 7.4 read and wri te access modes ................................ ................................ ...................... 7 7.5 burst read command ................................ ................................ ................................ .... 8 7.6 burst command ................................ ................................ ................................ .............. 8 7.7 read interrupted by a read ................................ ................................ ........................... 8 7. 8 read interrupted by a write ................................ ................................ ............................ 8 7.9 write interrupted by a write ................................ ................................ ............................ 8 7.10 write interrupted by a read ................................ ................................ ............................ 8 7.11 burst stop command ................................ ................................ ................................ ..... 9 7.12 addre ssing sequence of sequential mode ................................ ................................ .... 9 7.13 addressing sequence of interleave mode ................................ ................................ ...... 9 7.14 auto - precharge command ................................ ................................ ........................... 10 7.15 precharge command ................................ ................................ ................................ .... 10 7.16 self refresh command ................................ ................................ ................................ 10 7.17 power down mode ................................ ................................ ................................ ....... 11 7.18 no oper ation command ................................ ................................ ............................... 11 7.19 deselect command ................................ ................................ ................................ ...... 11 7.20 clock suspend mode ................................ ................................ ................................ .... 11 8. opera tion mode ................................ ................................ ................................ ................. 12 8.1 simplified stated diagram ................................ ................................ ............................ 13 9. electrical character istics ................................ ................................ ......................... 14 9. 1 absolute maximum ratings ................................ ................................ .......................... 14 9.2 recommended dc operating conditions ................................ ................................ .... 14 9.3 capacitance ................................ ................................ ................................ .................. 15 9.4 dc characteristics ................................ ................................ ................................ ........ 15 9.5 ac cha racteristics and operating condition ................................ ................................ 16 10. timing waveforms ................................ ................................ ................................ ............. 18 10.1 command input timing ................................ ................................ ................................ 18 10.2 r ead timing ................................ ................................ ................................ .................. 19 www.datasheet.co.kr datasheet pdf - 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W9864G2JH publication release date: dec. 01 , 2011 - 2 - revision a 0 1 10.3 control timing of input/output data ................................ ................................ ............. 20 10.4 mode register set cycle ................................ ................................ .............................. 21 11. operating timing exa mple ................................ ................................ ............................. 22 11.1 interleaved bank read (burst length = 4, cas latency = 3) ................................ ...... 22 11.2 interleaved bank read (burst length = 4, cas latency = 3, auto - pr echarge) ........... 23 11.3 interleaved bank read (burst length = 8, cas latency = 3) ................................ ...... 24 11.4 interleaved bank read (burst length = 8, cas latency = 3, auto - precharge) ........... 25 11.5 interleaved bank write (burst length = 8) ................................ ................................ ... 26 11.6 interleaved bank write (burst l ength = 8, auto - precharge) ................................ ........ 27 11.7 page mode read (burst length = 4, cas latency = 3) ................................ .............. 28 11.8 page mode read/write (burst length = 8, cas latency = 3) ................................ ..... 29 11.9 auto - precharge read (burst length = 4, cas latency = 3) ................................ ........ 30 11.10 auto - precharge write (burst length = 4) ................................ ................................ .... 31 11.11 auto refresh cycle ................................ ................................ ................................ ..... 32 11.12 self refresh cycle ................................ ................................ ................................ ....... 33 11.13 bust read and single write (burst length = 4, cas latency = 3) ............................. 34 11.14 power down mode ................................ ................................ ................................ ...... 35 11.15 auto - precharge timing (write cycle) ................................ ................................ .......... 36 11.16 auto - precharge timing (read cycle) ................................ ................................ .......... 37 11.17 timing chart of read to write cycle ................................ ................................ ........... 38 11.18 timing chart of write to read cycle ................................ ................................ ........... 38 11.19 timing chart of burst stop cycle (burst stop command) ................................ .......... 39 11.20 timing chart of burst stop cycle (precharge command) ................................ .......... 39 11.21 cke/dqm input timing (write cycle) ................................ ................................ ......... 40 11.22 cke/dqm input timing (read cycle) ................................ ................................ ......... 41 12. package specificatio n ................................ ................................ ................................ .... 42 12.1 86l tsop (ii) - 400 mil ................................ ................................ ................................ ... 42 13. revision history ................................ ................................ ................................ ................ 43 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 3 - revision a 0 1 1. general description W9864G2JH is a high - speed synchronous dynamic random access memory (sdram), organized as 512k words ? 4 banks ? ? 32 bits. W9864G2JH delivers a data bandwidth of up to 200 m word s per second. for different application, W9864G2JH is sorted into the following speed grades : - 5/ - 6 / - 6i / - 6a and - 7. the - 5 parts can run up to 200 mhz/cl3. the - 6 / - 6i / - 6a parts can r un up to 166 mhz/cl3. ( the - 6i industrial grade , - 6a automotive grade which is gu a ranteed to support - 40 c ~ 85 c . ) the - 7 parts can run up to 143 mhz/cl3. accesses to the sdram are burst oriented. consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an active command. column addresses are automatically g enerated by the sdram internal counter in burst operation. random column read is also possible by providing its address at each clock cycle. the multiple bank nature enables interleaving among internal banks to hide the precharging time. by having a progra mmable mode register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9864G2JH is ideal for main memory in high performance applications. 2. features ? 3 .3 v 0.3v for - 5/ - 6/ - 6i / - 6a grade s power sup ply 2. 7 v ~ 3.6v for - 7 grade power supply ? up to 200 mhz clock frequency ? 524,288 words ? ? 4 banks ? 32 bits organization ? self refresh current: standard and low power ? cas l atency: 2 & 3 ? burst length: 1, 2, 4, 8 and full page ? sequential and interleave b urst ? byte data controlled by dqm 0 - 3 ? auto - precharge and controlled precharge ? burst read, single write operation ? 4k refresh cycles/64 ms ? interface: lvttl ? packaged in tsop ii 86 - pin , using lead free materials with rohs compliant 3. available part numbe r part number speed maximum self refresh current operating temperature W9864G2JH - 5 200 m hz /cl3 2ma 0 c ~ 70 c W9864G2JH - 6 166m hz /cl3 2ma 0 c ~ 70 c W9864G2JH - 6 i 166m hz /cl3 2ma - 40 c ~ 85 c W9864G2JH - 6 a 166m hz /cl3 2ma - 40 c ~ 85 c W9864G2JH - 7 1 4 3 mhz /cl 3 2ma 0 c ~ 70 c www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 4 - revision a 0 1 4. pin configuration 8 6 8 4 8 3 8 2 8 1 8 0 7 9 7 8 7 7 7 6 7 5 7 4 7 3 7 2 7 1 7 0 6 9 6 8 6 7 6 6 6 5 6 4 6 3 6 2 6 1 6 0 5 9 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 2 4 2 5 2 6 2 7 3 7 3 8 3 9 4 0 4 1 4 2 4 3 2 8 2 9 3 0 3 1 3 2 3 3 3 4 3 5 3 6 5 0 4 9 4 8 4 7 4 6 4 5 4 4 5 8 5 7 5 6 5 5 5 4 5 3 5 2 5 1 8 5 v s s d q 1 5 v s s q d q 1 4 d q 1 3 v d d q d q 1 2 d q 1 1 v s s q d q 1 0 d q 9 v d d q d q 8 n c v s s d q m 1 n c n c c l k c k e a 9 a 8 a 7 a 6 a 5 a 4 a 3 d q m 3 v s s n c d q 3 1 v d d q d q 3 0 d q 2 9 v s s q d q 2 8 d q 2 7 v d d q d q 2 6 d q 2 5 v s s q d q 2 4 v s s v d d d q 0 v d d q d q 1 d q 2 v s s q d q 3 d q 4 v d d q d q 5 d q 6 v s s q d q 7 n c v d d d q m 0 w e c a s r a s c s n c b s 0 b s 1 a 1 0 / a p a 0 a 1 a 2 d q m 2 v d d n c d q 1 6 v s s q d q 1 7 d q 1 8 v d d q d q 1 9 d q 2 0 v s s q d q 2 1 d q 2 2 v d d q d q 2 3 v d d www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 5 - revision a 0 1 5. pin description pin n umber pin name function description 24, 25, 26, 27, 60, 61, 62, 63, 64, 65, 66 a0 ? a10 address multiplexed pins for row and column address. row address: a0 ? a10. column address: a0 ? a7. a10 is sampled during a precharge command to determine if all banks are to be precharged or bank selected by bs0, bs1. 22, 23 bs0, bs1 bank select select bank to activate during row address latch time, or bank to read/write during address latch time. 2, 4, 5, 7, 8, 10, 11, 13, 31, 33, 34, 36, 37, 39, 40, 42, 45, 47, 48, 50, 51, 53, 54, 56, 74, 76, 77, 79, 80, 82, 83, 85 dq0 ? dq31 data input/ output multiplexed pins for data output and input. 20 chip select disable or enable the command decoder. when command decoder is disabled, new command is ignored and previous operation continues. 19 row address strobe command input. when sampled at the rising edge of the clock , and defin e the operation to be executed. 18 column address strobe referred to 17 write enable referred to 16, 28, 59, 71 dqm0 ? dqm3 input/output mask the output buffer is placed at hi - z (with latency of 2) when dqm is sampled high in read cycle. in write cycle, sampling dqm high will block the write operation with zero latency. 6 8 clk clock inputs system clock used to sample inputs on the rising edge of clock. 67 cke clock enable cke controls the clock activation and deactivation. when cke is low, power down mode, suspend mode, or self refresh mode is entered. 1, 15, 29, 43 v dd power power for input buffers and logic circuit inside dram. 44, 58, 72, 86 v ss ground ground for input buffers and logic circuit inside dram. 3, 9, 35, 41, 49, 55, 75, 81 v dd q power for i/o buffer separated power from v dd , to improve dq noise immunity. 6, 12, 32, 38, 46, 52, 78, 84 v ss q ground for i/o buffer separated ground from vss, to improve dq noise immunity. 14, 21, 30, 57, 69, 70, 73 nc no connection no connection. cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 6 - revision a 0 1 6. block diagram dq0 dq31 dqm0~3 clk cke a10 clock buffer command decoder address buffer refresh count er column count er co nt ro l sig nal g enerat o r mode regist er column decoder sense amplifier cell array bank #2 column decoder sense amplifier cell array bank #0 column decoder sense amplifier cell array bank #3 dat a cont rol circuit dq buffer column decoder sense amplifier cell array bank #1 note: the cell array configuration is 2048 * 256 * 32 row decoder row decoder row decoder row decoder a0 a9 bs0 bs1 cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 7 - revision a 0 1 7. functional descripti on 7.1 power up and initialization the default power up state of the mode register is unspecified. the following power up and initialization sequence need to be followed to guarantee the device being preconditioned to each user specific needs. during power up, all v dd and v dd q pins must be ramp up simultaneously to the spec ified voltage when the input signals are held in the nop state. the power up voltage must not exceed v dd + 0.3v on any of the input pins or v dd supplies. after power up, an initial pause of 200 s is required followed by a precharge of all banks using th e precharge command. to prevent data contention on the dq bus during power up, it is required that the dqm and cke pins be held high during the initial pause period. once all banks have been precharged, the mode register set command must be issued to initi alize the mode register. an additional eight auto refresh cycles (cbr) are also required before or after programming the mode register to ensure proper subsequent operation. 7.2 programming mode register after initial power up, the mode register set command mu st be issued for proper device operation. all banks must be in a precharged state and cke must be high at least one cycle before the mode register set command can be issued. the mode register set command is activated by the low signals of , , and at the positive edge of the clock. the address input data during this cycle defines the parameters to be set as shown in the mode register operation table. a new command may b e issued following the mode register set command once a delay equal to t rsc has elapsed. please refer to the next page for mode register set cycle and operation table. 7.3 bank activate command the bank activate command must be applied before any read or write operation can be executed. the operation is similar to ras activate in edo dram. the delay from when the bank activate command is applied to when the first read or write operation can begin must not be less than the ras to cas delay time (t rcd ). once a ba nk has been activated it must be precharged before another bank activate command can be issued to the same bank. the minimum time interval between successive bank activate commands to the same bank is determined by the ras cycle time of the device (t rc ). t he minimum time interval between interleaved bank activate commands (bank a to bank b and vice versa) is the bank to bank delay time (t rrd ). the maximum time that each bank can be held active is specified as t ras (max.). 7.4 read and write access modes after a bank has been activated, a read or write cycle can be followed. this is accomplished by setting high and low at the clock rising edge after minimum of t rcd delay. pin voltage level defin es whether the access cycle is a read operation ( high), or a write operation ( low). the address inputs determine the starting column address. reading or writing to a different row within an activated bank requires the bank be precharged and a new bank activate command be issued. when more than one bank is activated, interleaved bank read or write operations are possible. by using the programmed burst l ength and alternating the access and precharge operations between multiple banks, seamless data access operation among many different pages can be realized. read or write commands can also be issued to the same bank or between active banks on every clock c ycle. cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 8 - revision a 0 1 7.5 burst read command the burst read command is initiated by applying logic low level to and while holding and high at the rising edge of the clock. the address inputs determine the starting column address for the burst. the mode register sets type of burst (sequential or interleave) and the burst length (1, 2, 4, 8 and full page) during the mode register set up cycle. table 2 and 3 in the next page explain the a ddress sequence of interleave mode and sequence mode. 7.6 burst command the burst write command is initiated by applying logic low level to , and while holding high at t he rising edge of the clock. the address inputs determine the starting column address. data for the first burst write cycle must be applied on the dq pins on the same clock cycle that the write command is issued. the remaining data inputs must be supplied on each subsequent rising clock edge until the burst length is completed. data supplied to the dq pins after burst finishes will be ignored. 7.7 read interrupted by a read a burst read may be interrupted by another read command. when the previous burst is inte rrupted, the remaining addresses are overridden by the new read address with the full burst length. the data from the first read command continues to appear on the outputs until the cas l atency from the interrupting read command the is satisfied. 7.8 read inte rrupted by a write to interrupt a burst read with a write command, dqm may be needed to place the dqs (output drivers) in a high impedance state to avoid data contention on the dq bus. if a read command will issue data on the first and second clocks cycles of the write operation, dqm is needed to insure the dqs are tri - stated. after that point the write command will have control of the dq bus and dqm masking is no longer needed. 7.9 write interrupted by a write a burst write may be interrupted before completion of the burst by another write command. when the previous burst is interrupted, the remaining addresses are overridden by the new address and data will be written into the device until the programmed burst length is satisfied. 7.10 write interrupted by a read a read command will interrupt a burst write operation on the same clock cycle that the read command is activated. the dqs must be in the high impedance state at least one cycle before the new read data appears on the outputs to avoid data contention. when t he read command is activated, any residual data from the burst write cycle will be ignored. cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 9 - revision a 0 1 7.11 burst stop command a burst stop command may be used to terminate the existing burst operation but leave the bank open for future read or write commands to the same page of the active bank, if the burst length is full page. use of the burst stop command during other burst length operations is illegal. the burst stop command is defined by having and high with and low at the rising edge of the clock. the data dqs go to a high impedance state after a delay, which is equal to the cas latency in a burst read cycle, interrupted by burst stop. 7.12 addressing sequence of sequential mode a column access is performed by increasing the address from the column address which is input to the device. the disturb address is varied by the burst length as shown in table 2 . table 2 address sequence of sequential mode d ata access address burst length data 0 n bl = 2 (disturb address is a0) data 1 n + 1 no address carry from a0 to a1 data 2 n + 2 bl = 4 (disturb addresses are a0 and a1) data 3 n + 3 no address carry from a1 to a2 data 4 n + 4 data 5 n + 5 bl = 8 (disturb addresses are a0, a1 and a2) data 6 n + 6 no address carry from a2 to a3 data 7 n + 7 7.13 addressing sequence of interleave mode a column access is started in the input column address and is performed by inverting the address bit in the sequence shown in table 3. table 3 address sequence of interleave mode d ata access address burst length data 0 a8 a7 a6 a5 a4 a3 a2 a1 a0 bl = 2 data 1 a8 a7 a6 a5 a4 a3 a2 a1 data 2 a8 a7 a6 a5 a4 a3 a2 a0 bl = 4 data 3 a8 a7 a6 a5 a4 a3 a2 data 4 a8 a7 a6 a5 a4 a3 a1 a0 bl = 8 data 5 a8 a7 a6 a5 a4 a3 a1 data 6 a8 a7 a6 a5 a4 a3 a0 data 7 a8 a7 a6 a5 a4 a3 cs ras cas we a0 a1 a2 a2 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 10 - revision a 0 1 7.14 auto - precharge command if a10 is set to high when the read or write command is issued, then the auto - precharge function is entered. during auto - precharge, a read command will execute as normal with the exception that the active bank will begin to precharge automatically before a ll burst read cycles have been completed. regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled burst cycle. the number of clocks is determined by cas l atenc y. a read or write command with auto - precharge can not be interrupted before the entire burst operation is completed for the same bank. therefore, use of a read, write, or precharge command is prohibited during a read or write cycle with auto - precharge. once the precharge operation has started, the bank ca nnot be reactivated until the precharge time (t rp ) has been satisfied. issue of auto - precharge command is illegal if the burst is set to full page length. if a10 is high when a write command is issued, the write with auto - precharge function is initiated. t he sdram automatically enters the precharge operation two clocks delay from the last burst write cycle. this delay is referred to as write t wr . the bank undergoing auto - precharge cannot be reactivated until t wr and t rp are satisfied. this is referred to as t dal , data - in to active delay (t dal = t wr + t rp ). when using the auto - precharge command, the interval between the bank activate command and the beginning of the internal precharge operation must satisfy t ras (min). 7.15 precharge command the precharge command is used to precharge or close a bank that has been activated. the precharge command is entered when , and are low and is high at the rising edg e of the clock. the precharge command can be used to precharge each bank separately or all banks simultaneously. three address bits, a10, bs0 and bs1 are used to define which bank(s) is to be precharged when the command is issued. after the precharge comma nd is issued, the precharged bank must be reactivated before a new read or write access can be executed. the delay between the precharge command and the activate command must be greater than or equal to the precharge time (t rp ). 7.16 self refresh command the se lf refresh command is defined by having , , and cke held low with high at the rising edge of the clock. all banks must be idle prior to issuing the self refresh comma nd. once the command is registered, cke must be held low to keep the device in self refresh mode. when the sdram has entered self refresh mode all of the external control signals, except cke, are disabled. the clock is internally disabled during self refre sh operation to save power. the device will exit self refresh operation after cke is returned high. any subsequent commands can be issued after t xsr from the end of self refresh c ommand . if, during normal operation, auto refresh cycles are issued in bursts (as opposed to being evenly distributed), a burst of 4 ,0 96 auto refresh cycles should be completed just prior to entering and just after exiting the self refresh mode. cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 11 - revision a 0 1 7.17 power down mode the power down mode is initiated by holding cke low. all of the receiver circuits except cke are gated off to reduce the power. the power down mode does not perform any refresh operations, therefore the device can not remain in power down mode longer than the refresh period (t ref ) of the device. the power down mode is exited by bringing cke high. when cke goes high, a no operation command is required on the next rising clock edge, depending on t ck . the input buffers need to be enabled with cke held high for a period equal to t c k s (min.) + t ck (min.). 7.18 no operation comman d the no operation command should be used in cases when the sdram is in a idle or a wait state to prevent the sdram from registering any unwanted commands between operations. a no operation command is registered when is low with , and held high at the rising edge of the clock. a no operation command will not terminate a previous operation that is still executing, such as a burst read or write cycle. 7.19 deselect command t he deselect command performs the same function as a no operation command. deselect command occurs when is brought high, the , and signals become dont cares. 7.20 clock s uspend mode during normal access mode, cke must be held high enabling the clock. when cke is registered low while at least one of the banks is active, clock suspend mode is entered. the clock suspend mode deactivates the internal clock and suspends any clo cked operation that was currently being executed. there is a one clock delay between the registration of cke low and the time at which the sdram operation suspends. while in clock suspend mode, the sdram ignores any new commands that are issued. the clock suspend mode is exited by bringing cke high. there is a one clock cycle delay from when cke returns high to whe n clock suspend mode is exited. cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 12 - revision a 0 1 8. o peration m ode fully synchronous operations are performed to latch the commands at the positive edges of clk. table 1 shows the truth table for the operation commands. table 1 truth table (note (1), (2)) command device s tate cken - 1 cken dqm bs0, 1 a10 a0 - a9 bank active idle h x x v v v l l h h bank precharge any h x x v l x l l h l precharge all any h x x x h x l l h l write active (3) h x x v l v l h l l write with auto - precharge active (3) h x x v h v l h l l read active (3) h x x v l v l h l h read with auto - precharge active (3) h x x v h v l h l h mode register set idle h x x v v v l l l l no - operation any h x x x x x l h h h burst stop active (4) h x x x x x l h h l device deselect any h x x x x x h x x x auto - refresh idle h h x x x x l l l h self - refresh entry idle h l x x x x l l l h self refresh exit idle (s.r) l l h h x x x x x x x x h l x h x h x x clock suspend mode entry active h l x x x x x x x x power down mode entry idle active (5) h h l l x x x x x x x x h l x h x h x h clock suspend mode exit active l h x x x x x x x x power down mode exit any (power down) l l h h x x x x x x x x h l x h x h x h data write/output enable active h x l x x x x x x x data write/output disable active h x h x x x x x x x notes : (1) v = valid, x = dont care, l = low level, h = high level (2) cken signal is input leve l when commands are provided. (3) these are state of bank designated by bs0, bs1 signals. (4) device state is full page burst operation. (5) power down mode can not be entered in th e burst cycle. when this command asserts in the burst cycle, device state is clock suspend mode. cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 13 - revision a 0 1 8.1 s implified s tated d iagram mrs = mode register set ref = refresh act = active pre = precharge writea = write with auto - p recharge reada = read with auto - p recharge mode register set idle cbr ref resh self ref resh row active power down precharge power on activ e power down write write suspend writea writea suspend read suspend read reada suspend reada precharge mrs ref act cke cke cke cke cke cke cke cke cke cke self self exit cke cke write with read write auto precharge auto precharge read with write write read pre(precharge termination) pre(precharge termination) read bst bst pre manual input automatic sequence www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 14 - revision a 0 1 9. electrical characteristics 9.1 a bsolute m aximum r atings p arameter s ymbol r ating u nit notes voltage on any pin relative to v ss v in , v out - 0. 5 ~ v dd + 0. 5 ( < 4.6v max.) v 1 voltage on v dd /v ddq supply relative to v ss v dd , v ddq - 0. 5 ~ 4.6 v 1 operating temperature ( - 5/ - 6/ - 7) t opr 0 ~ 70 c 1 operating temperature ( - 6i / - 6a ) t opr - 4 0 ~ 85 c 1 storage temperature t stg - 55 ~ 150 c 1 soldering temperature (10s) t solder 260 c 1 power dissipation p d 1 w 1 short circuit output current i out 50 ma 1 note: 1. exposure to conditions beyond those listed under absolute maximum ratings may adversely affect the life and reliability of the device . 9.2 recommended dc operating conditions ( t a = 0 to 70 c for - 5/ - 6/ - 7, t a = - 40 to 85 c for - 6i/ - 6a ) p arameter s ym. m in . t yp . m ax . u nit notes power supply voltage for - 6/ - 6i/ - 6a v dd 3.0 3.3 3.6 v power supply voltage ( i/o buffer ) for - 6/ - 6i/ - 6a v dd q 3.0 3.3 3.6 v power supply voltage for - 7 v dd 2. 7 3.3 3.6 v power supply voltage ( i/o buffer ) for - 7 v dd q 2. 7 3.3 3.6 v input high voltage v ih 2 - v dd + 0.3 v 1 input low voltage v il - 0.3 - +0.8 v 2 output logic high voltage v oh 2.4 - - v i oh = - 2ma output logic low voltage v ol - - 0. 4 v i ol = 2 ma input leakage current i i (l) - 10 - 10 a 3 output leakage current i o (l) - 10 - 10 a 4 note: 1. v ih (max.) = v dd /v dd q +1. 5 v for pulse width < 5 ns . 2. vil (min.) = v ss / vssq - 1. 5 v for pulse width < 5 ns . 3. any input 0v < v in < v dd q . input leakage currents include hi - z output leakage for all bi - directional buffers with tri - state outputs . 4. output disabled , 0v v out v dd q www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 15 - revision a 0 1 9.3 capacitance ( v dd = 3.3v0.3v for - 5/ - 6/ - 6i / - 6a , v dd = 2. 7 v - 3.6v for - 7 , t a = 25 c , f = 1 mhz) p arameter s ym. m in . m ax . u nit input capacitance (a0 to a10, bs0, bs1 , , , , , dqm, cke) c i 2.5 4 pf input capacitance (clk) c clk 2.5 4 pf input/output capacitance (dq0 ? dq31) c o 4 6.5 pf note: these parameters are periodically sampled and not 100% tested 9.4 dc characteristics (v dd = 3.3v0.3v for - 6 , v dd = 2. 7 v - 3.6v for - 7 on t a = 0 to 70 c , v dd = 3.3v0.3v for - 6i / - 6a on t a = - 40 to 85 c ) p arameter s ym . m ax . unit notes - 5 - 6 / - 6i/ - 6a - 7 operating current t ck = min., t rc = min. active precharge command cycling without burst operation 1 b ank o peration i dd1 90 80 75 ma 3 standby current t ck = min., = v ih v ih/l = v ih (min.)/v il (max.) cke = v ih i dd2 25 25 25 3 bank: inactive state cke = v il (power down m ode) i dd2p 2 2 2 3 standby current clk = v il , = v ih v ih/l =v ih (min.)/v il (max.) cke = v ih i dd2s 15 15 15 b ank : inactive state cke = v il (power down m ode) i dd2ps 2 2 2 no operating current t ck = min., = v ih (min.) cke = v ih i dd3 60 55 50 b ank : active state (4 b anks) cke = v il (power down m ode) i dd3p 10 10 10 burst operating current (t ck = min.) read/write command cycling i dd4 14 5 130 120 3, 4 auto refresh current (t ck = min.) auto refresh command cycling i dd5 15 5 140 130 3 self refresh current self refresh mode (cke = 0.2v) i dd6 2 2 2 cs cs ras cas we www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 16 - revision a 0 1 9.5 ac characteristics and operating condition ( v dd = 3.3v0.3v for - 5/ - 6 , v dd = 2. 7 v ~ 3.6v for - 7 on t a = 0 to 70 c , v dd = 3.3v0.3v for - 6i / - 6a on t a = - 40 to 85 c ) (notes: 5, 6 ) parameter sym. - 5 - 6/ - 6i/ - 6a - 7 u nit notes m in . m ax . m in . m ax . m in . m ax . ref/active to ref/active command period t rc 55 60 6 5 ns active to precharge command period t ras 4 0 100000 42 100000 4 5 100000 active to read/write command delay time t rcd 1 5 18 20 read/write(a) to read/write(b) command period t ccd 1 1 1 t ck precharge to active command period t rp 1 5 18 20 ns active(a) to active(b) command period t rrd 1 0 12 1 4 write recovery time cl* = 2 t wr 2 2 2 t ck cl* = 3 2 2 2 clk cycle time cl* = 2 t ck 10 1000 7.5 1000 10 1000 ns cl* = 3 5 1000 6 1000 7 1000 clk high level width t ch 2 2 2 8 clk low level width t cl 2 2 2 8 access time from clk cl* = 2 t ac 6 5.5 6 9 cl* = 3 4.5 5 5.5 output data hold time t oh 3 3 3 9 output data high impedance time cl* = 2 t hz 6 6 6 7 cl* = 3 4.5 5 5.5 output data low impedance time t lz 0 0 0 9 power down mode entry time t sb 0 5 0 6 0 7 transition time of clk (rise and fall) t t 1 1 1 data - in set - up time t ds 1.5 1.5 1.5 8 data - in hold time t dh 1.0 1.0 1.0 8 address set - up time t as 1.5 1.5 1.5 8 address hold time t ah 1.0 1.0 1.0 8 cke set - up time t cks 1.5 1.5 1.5 8 cke hold time t ckh 1.0 1.0 1.0 8 command set - up time t cms 1.5 1.5 1.5 8 command hold time t cmh 1.0 1.0 1.0 8 refresh time t ref 64 64 64 ms mode register set cycle time t rsc 2 2 2 t ck exit self refresh to active command t xsr 70 72 75 ns *cl = cas latency www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 17 - revision a 0 1 notes: 1. operation exceeds absolute maximum ratings may cause permanent damage to the devices . 2. all voltages are referenced to v ss . ? 2. 7 v~3.6v power supply for - 7 speed grade s . 3. these parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of t ck and t rc . 4. these parameters depend on the output loading conditions. specified values are obtained with output open . 5. power up sequence please refer to functional description section described before . 6. ac test load diagram . 7. t hz defines the time at which the outputs achieve the open circuit condition and is not referenced to output level . 8. assumed input rise and fall time (t t ) = 1n s . if tr & tf is longer than 1n s , transient time compensation should be considered, i.e., [(tr + tf)/2 - 1]ns should be added to the parameter . 9. if clock rising time (t t ) is longer than 1ns, (t t /2 - 0.5)ns should be added to the parameter . 50 ohms 1.4 v ac test load z = 50 ohms output 30pf www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 18 - revision a 0 1 10. timing waveforms 10.1 command input timing c l k a 0 - a 1 0 b s 0 , 1 v i h v i l t c m h t c m s t c h t c l t t t t t c k s t c k h t c k h t c k s t c k s t c k h c s r a s c a s w e c k e t c m s t c m h t c m s t c m h t c m s t c m h t c m s t c m h t a s t a h t c k www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 19 - revision a 0 1 10.2 read timing r e a d c a s l a t e n c y t a c t l z t a c t o h t h z t o h b u r s t l e n g t h r e a d c o m m a n d c l k c s r a s c a s w e a 0 - a 1 0 b s 0 , 1 d q v a l i d d a t a - o u t v a l i d d a t a - o u t www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 20 - revision a 0 1 10.3 control timing of input /output data t c m h t c m s t c m h t c m s t d s t d h t d s t d h t d s t d h t d s t d h v a l i d d a t a - o u t v a l i d d a t a - o u t v a l i d d a t a - o u t v a l i d d a t a - i n v a l i d d a t a - i n v a l i d d a t a - i n v a l i d d a t a - i n t c k h t c k s t c k h t c k s t d s t d h t d s t d h t d h t d s t d s t d h v a l i d d a t a - i n v a l i d d a t a - i n v a l i d d a t a - i n v a l i d d a t a - i n t c m h t c m s t c m h t c m s t o h t a c t o h t a c t o h t h z o p e n t l z t a c t o h t a c t c k h t c k s t c k h t c k s t o h t a c t o h t a c t o h t a c t o h t a c v a l i d d a t a - o u t v a l i d d a t a - o u t v a l i d d a t a - o u t c l k d q m d q 0 ~ 3 1 ( w o r d m a s k ) ( c l o c k m a s k ) c l k c k e d q 0 ~ 3 1 c l k c o n t r o l t i m i n g o f i n p u t d a t a c o n t r o l t i m i n g o f o u t p u t d a t a ( o u t p u t e n a b l e ) ( c l o c k m a s k ) d q m d q 0 ~ 3 1 c k e c l k d q 0 ~ 3 1 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 21 - revision a 0 1 10.4 mode register set cycle a 0 a 1 a 2 a 3 a 4 a 5 a 6 b u r s t l e n g t h a d d r e s s i n g m o d e c a s l a t e n c y ( t e s t m o d e ) a 8 r e s e r v e d a 7 a 9 w r i t e m o d e a 1 0 b s 0 0 0 a 0 a 3 a d d r e s s i n g m o d e 0 s e q u e n t i a l 1 i n t e r l e a v e a 0 a 9 s i n g l e w r i t e m o d e 0 b u r s t r e a d a n d b u r s t w r i t e 1 b u r s t r e a d a n d s i n g l e w r i t e a 0 a 2 a 1 a 0 a 0 0 0 0 a 0 0 0 1 a 0 0 1 0 a 0 0 1 1 a 0 1 0 0 a 0 1 0 1 a 0 1 1 0 a 0 1 1 1 b u r s t l e n g t h s e q u e n t i a l i n t e r l e a v e 1 1 2 2 4 4 8 8 r e s e r v e d r e s e r v e d f u l l p a g e c a s l a t e n c y r e s e r v e d r e s e r v e d 2 3 r e s e r v e d a 0 a 6 a 5 a 4 a 0 0 0 0 0 1 0 a 0 0 1 1 a 0 1 0 0 a 0 0 0 1 r e s e r v e d 0 0 b s 1 0 * " r e s e r v e d " s h o u l d s t a y " 0 " d u r i n g m r s c y c l e . m o d e r e g i s t e r s e t t r s c t c m s t c m h t c m s t c m h t c m s t c m h t c m s t c m h t a s t a h c l k c s r a s c a s w e a 0 - a 1 0 b s 0 , 1 r e g i s t e r s e t d a t a n e x t c o m m a n d www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 22 - revision a 0 1 11. o perating t iming e xample 11.1 interleaved bank read (burst length = 4, cas latency = 3) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 c l k d q c k e d q m a 0 - a 9 a 1 0 w e c s t r c t r c t r c t r c t r a s t r p t r a s t r p t r p t r a s t r a s t r c d t r c d t r c d t r c d t a c t a c t a c t a c t r r d t r r d t r r d t r r d a c t i v e r e a d a c t i v e r e a d a c t i v e a c t i v e a c t i v e r e a d r e a d p r e c h a r g e p r e c h a r g e p r e c h a r g e r a a r b b r a c r b d r a e r a a c a w r b b c b x r a c c a y r b d c b z r a e a w 0 a w 1 a w 2 a w 3 b x 0 b x 1 b x 2 b x 3 c y 0 c y 1 c y 2 c y 3 r a s c a s b s 1 b s 0 b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 23 - revision a 0 1 11.2 interleaved bank read (burst length = 4, cas latency = 3, auto - p recharge) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 c l k c k e d q m a 0 - a 9 a 1 0 b s 1 w e c a s r a s c s b s 0 t r c t r c t r c t r a s t r p t r a s t r p t r a s t r p t r c d t r c d t r c d t a c t a c t a c t a c t r r d t r r d t r r d t r r d a c t i v e r e a d a c t i v e r e a d a c t i v e a c t i v e a c t i v e r e a d r e a d t r c r a a r a c r b d r a e d q a w 0 a w 1 a w 2 a w 3 b x 0 b x 1 b x 2 b x 3 c y 0 c y 1 c y 2 c y 3 d z 0 * a p i s t h e i n t e r n a l p r e c h a r g e s t a r t t i m i n g b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 a p * a p * r a a c a w r b b c b x r a c c a y r b d r a e c b z r b b a p * t r c d www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 24 - revision a 0 1 11.3 interleaved bank read (burst length = 8, cas latency = 3) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 t r c t r a s t r p t r p t r a s t r c d t r c d t r c d t r r d t r r d r a a r a a c a x r b b r b b c b y r a c r a c c a z a x 0 a x 1 a x 2 a x 3 a x 4 a x 5 a x 6 b y 0 b y 1 b y 4 b y 5 b y 6 b y 7 c z 0 c l k d q c k e d q m a 0 - a 9 a 1 0 b s 1 w e c a s r a s c s a c t i v e r e a d p r e c h a r g e a c t i v e r e a d p r e c h a r g e a c t i v e t a c t a c r e a d p r e c h a r g e t a c b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 b s 0 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 25 - revision a 0 1 11.4 interleaved bank read (burst length = 8, cas latency = 3, auto - p recharge) a 0 - a 9 b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 t r c t r a s t r p t r a s t r c d t r c d t r c d t r r d t r r d a x 0 a x 1 a x 2 a x 3 a x 4 a x 5 a x 6 a x 7 b y 0 b y 1 b y 4 b y 5 b y 6 c z 0 r a a r a a c a x r b b r b b c b y r a c r a c c a z * a p i s t h e i n t e r n a l p r e c h a r g e s t a r t t i m i n g a c t i v e r e a d a c t i v e a c t i v e r e a d t a c t a c t a c c l k d q c k e d q m a 1 0 w e c a s r a s c s r e a d a p * a p * b s 1 b s 0 t r a s t r p www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 26 - revision a 0 1 11.5 interleaved bank write (burst length = 8) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 t r c t r a s t r p t r a s t r c d t r c d t r c d t r r d t r r d r a a r a a c a x r b b r b b c b y r a c r a c c a z a x 0 a x 1 b y 4 b y 5 b y 6 b y 7 c z 0 c z 1 c z 2 w r i t e p r e c h a r g e a c t i v e a c t i v e w r i t e p r e c h a r g e a c t i v e w r i t e c l k d q c k e d q m a 0 - a 9 a 1 0 b s 1 w e c a s r a s c s i d l e b a n k # 0 b a n k # 1 b a n k # 2 b a n k # 3 b s 0 a x 4 a x 5 a x 6 a x 7 b y 0 b y 1 b y 2 b y 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 27 - revision a 0 1 11.6 interleaved bank write (burst length = 8, auto - p recharge) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 t r c t r a s t r p t r a s t r c d t r c d t r c d t r r d t r r d r a a r a a c a x r b b r b b c b y r a b r a c a x 0 a x 1 a x 4 a x 5 a x 6 a x 7 b y 0 b y 1 b y 2 b y 3 b y 4 b y 5 b y 6 b y 7 c z 0 c z 1 c z 2 c a z * a p i s t h e i n t e r n a l p r e c h a r g e s t a r t t i m i n g c l k d q c k e d q m a 0 - a 9 a 1 0 b s 1 w e c a s r a s c s a c t i v e w r i t e w r i t e a c t i v e b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 a p * a c t i v e w r i t e a p * b s 0 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 28 - revision a 0 1 11.7 page mode read (burst length = 4, cas latency = 3) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 t c c d t c c d t c c d t r a s t r a s t r c d t r c d t r r d r a a r a a c a i r b b r b b c b x c a y c a m c b z a 0 a 1 a 2 a 3 b x 0 b x 1 a y 0 a y 1 a y 2 a m 0 a m 1 a m 2 b z 0 b z 1 b z 2 b z 3 * a p i s t h e i n t e r n a l p r e c h a r g e s t a r t t i m i n g c l k d q c k e d q m a 0 - a 9 a 1 0 b s 1 w e c a s r a s c s a c t i v e r e a d a c t i v e r e a d r e a d r e a d r e a d p r e c h a r g e t a c t a c t a c t a c t a c b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 a p * b s 0 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 29 - revision a 0 1 11.8 page mode read/write (burst length = 8, cas latency = 3) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 t r a s t r c d t w r r a a r a a c a x c a y a x 0 a x 1 a x 2 a x 3 a x 4 a x 5 a y 1 a y 0 a y 2 a y 4 a y 3 q q q q q q d d d d d c l k d q c k e d q m a 0 - a 9 a 1 0 b s 1 w e c a s r a s c s a c t i v e r e a d w r i t e p r e c h a r g e t a c b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 b s 0 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 30 - revision a 0 1 11.9 auto - p recharge read (burst length = 4, cas latency = 3) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 c l k d q c k e d q m a 0 - a 9 a 1 0 w e c a s r a s c s b s 1 t r c t r a s t r p t r a s t r c d t r c d t a c t a c a c t i v e r e a d a p * a c t i v e r e a d a p * r a a r a b r a a c a w r a b c a x a w 0 a w 1 a w 2 a w 3 * a p i s t h e i n t e r n a l p r e c h a r g e s t a r t t i m i n g b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 b s 0 b x 0 b x 2 b x 1 b x 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 31 - revision a 0 1 11.10 auto - p recharge write (burst length = 4) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 c l k d q c k e d q m a 0 - a 9 a 1 0 w e c a s r a s c s b s 1 t r c t r c t r p t r a s t r p r a a t r c d t r c d r a b r a c r a a r a b c a x r a c b x 0 b x 1 b x 2 b x 3 a c t i v e a c t i v e w r i t e a p * a c t i v e w r i t e a p * * a p i s t h e i n t e r n a l p r e c h a r g e s t a r t t i m i n g b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 t r a s b s 0 c a w a w 0 a w 1 a w 2 a w 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 32 - revision a 0 1 11.11 auto r efresh cycle 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 a l l b a n k s p r e c h a g e a u t o r e f r e s h a u t o r e f r e s h ( a r b i t r a r y c y c l e ) t r c t r p t r c c l k d q c k e d q m a 0 - a 9 a 1 0 w e c a s r a s c s b s 0 , 1 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 33 - revision a 0 1 11.12 self r efresh cycle c l k d q c k e d q m a 0 - a 9 a 1 0 b s 0 , 1 w e c a s r a s c s t c k s t s b t c k s a l l b a n k s p r e c h a r g e s e l f r e f r e s h e n t r y a r b i t r a r y c y c l e t r p s e l f r e f r e s h c y c l e t x s r n o o p e r a t i o n / c o m m a n d i n h i b i t s e l f r e f r e s h e x i t www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 34 - revision a 0 1 11.13 bust read and single write (burst length = 4, cas latency = 3) 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 c l k c s r a s c a s w e b s 1 b s 0 a 1 0 a 0 - a 9 d q m c k e d q t r c d r b a r b a c b v c b w c b x c b y c b z a v 0 a v 1 a v 2 a v 3 a w 0 a x 0 a y 0 a z 0 a z 1 a z 2 a z 3 q q q q d d d q q q q t a c t a c r e a d r e a d s i n g l e w r i t e a c t i v e b a n k # 0 i d l e b a n k # 1 b a n k # 2 b a n k # 3 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 35 - revision a 0 1 11.14 power down mode 0 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 1 6 1 7 1 8 1 9 2 0 2 1 2 2 2 3 r a a c a a r a a c a x r a a r a a a x 0 a x 1 a x 2 a x 3 t s b t c k s t c k s t c k s t s b t c k s a c t i v e s t a n d b y p o w e r d o w n m o d e p r e c h a r g e s t a n d b y p o w e r d o w n m o d e a c t i v e n o p p r e c h a r g e n o p a c t i v e n o t e : t h e p o w e r d o w n m o d e i s e n t e r e d b y a s s e r t i n g c k e " l o w " . a l l i n p u t / o u t p u t b u f f e r s ( e x c e p t c k e b u f f e r s ) a r e t u r n e d o f f i n t h e p o w e r d o w n m o d e . w h e n c k e g o e s h i g h , c o m m a n d i n p u t m u s t b e n o o p e r a t i o n a t n e x t c l k r i s i n g e d g e . v i o l a t i n g r e f r e s h r e q u i r e m e n t s d u r i n g p o w e r - d o w n m a y r e s u l t i n a l o s s o f d a t a . c l k d q c k e d q m a 0 - a 9 a 1 0 b s w e c a s r a s c s r e a d www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 36 - revision a 0 1 11.15 auto - p recharge timing (write cycle) act 0 1 3 2 (1) cas latency = 2 (a) burst length = 1 dq 4 5 7 6 8 9 11 10 write d0 act ap command (b) burst length = 2 dq write d0 act ap command trp trp d1 (c) burst length = 4 dq write d0 act ap command trp d1 (d) burst length = 8 dq write d0 act ap command trp d1 d2 d3 d2 d3 d4 d5 d6 d7 (2) cas latency = 3 (a) burst length = 1 dq write d0 act ap command (b) burst length = 2 dq write d0 act ap command trp trp d1 (c) burst length = 4 dq write d0 act ap command trp d1 (d) burst length = 8 dq write d0 ap command trp d1 d2 d3 d2 d3 d4 d5 d6 d7 twr twr twr twr twr twr twr twr 12 act represents the write with auto precharge command. represents the start of internal precharing. represents the bank activ e command. write ap act act when the /auto precharge command is asserted,the period f rom bank activ ate command to the start of intermal precgarging must be at least tras (min). note ) clk www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 37 - revision a 0 1 11.16 auto - p recharge timing (read cycle) read ap 0 11 10 9 8 7 6 5 4 3 2 1 q 0 q 0 read ap act q 1 read ap act q 1 q 2 ap act read act q 0 q 3 ( 1 ) cas latency = 2 read act ap when the auto precharge command is asserted , the period from bank activate command to the start of internal precgarging must be at least t ras ( min ). represents the read with auto precharge command . represents the start of internal precharging . represents the bank activate command . note : t rp t rp t rp ( a ) burst length = 1 command ( b ) burst length = 2 command ( c ) burst length = 4 command ( d ) burst length = 8 command dq dq dq dq q 0 q 1 q 2 q 3 q 4 q 5 q 6 q 7 t rp q 0 read ap act q 0 read ap act q 1 q 0 read ap act q 1 q 2 q 3 read ap act q 0 q 1 q 2 q 3 q 4 q 5 q 6 q 7 ( 2 ) cas latency = 3 t rp t rp t rp t rp ( a ) burst length = 1 command ( b ) burst length = 2 command ( c ) burst length = 4 command ( d ) burst length = 8 command dq dq dq dq www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 38 - revision a 0 1 11.17 timing chart of read to write cycle 11.18 timing chart of write to read cycle note: the output data must be masked by dqm to avoid i/o conflict. read write 11 10 9 8 7 6 5 4 3 2 1 read read read write write d0 d1 d2 d3 write dq dq ( a ) command 0 dq dq dqm ( b ) command dqm ( b ) command dqm dqm d0 d1 d2 d3 d0 d1 d2 d3 d0 d1 d2 d3 (1) cas latency =2 ( a ) command (2) cas latency =3 in the case of burst length = 4 read write 0 11 10 9 8 7 6 5 4 3 2 1 q0 read q1 q2 q3 read read write write q0 q1 q2 q3 write q0 q1 q2 q3 d0 d1 dq dq ( a ) c ommand dq dq d qm ( b ) c ommand d qm ( a ) c ommand ( b ) c ommand d qm d qm in the case of burst length=4 (1) ca s latenc y=2 (2) ca s latenc y=3 d0 d0 d1 q0 q1 q2 q3 d0 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 39 - revision a 0 1 11.19 timing chart of burst stop cycle (burst stop command) 11.20 timing chart of burst stop cycle (precharge command) 0 1 11 10 9 8 7 6 5 4 3 2 ( 1 ) read cycle ( a ) cas latency = 2 command q 0 q 1 q 2 q 3 q 4 prcg read ( b ) cas latency = 3 command q 0 q 1 q 2 q 3 q 4 prcg read dq dq ( 2 ) write cycle command q 0 q 1 q 2 q 3 q 4 prcg write dq dqm twr read bst 0 11 10 9 8 7 6 5 4 3 2 1 dq q0 q1 q2 q3 bst ( a ) cas latency =2 command ( b )cas latency = 3 (1) read cycle q4 (2) w rite cycle command read command q0 q1 q2 q3 q4 q0 q1 q2 q3 q4 dq dq write bst note: represents the burst stop command bst www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 40 - revision a 0 1 11.21 cke/dqm input timing (write cycle) 7 6 5 4 3 2 1 cke mask ( 1 ) d1 d6 d5 d3 d2 clk cy cle no. external internal cke dqm dq 7 6 5 4 3 2 1 ( 2 ) d1 d6 d5 d3 d2 clk cy cle no. external internal cke dqm dq 7 6 5 4 3 2 1 ( 3 ) d1 d6 d5 d4 d3 d2 clk cy cle no. external cke dqm dq dqm mask dqm mask cke mask cke mask internal clk clk clk www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 41 - revision a 0 1 11.22 cke/dqm input timing (read cycle) 7 6 5 4 3 2 1 ( 1 ) q1 q6 q4 q3 q2 clk cy cle no. external internal cke dqm dq open open 7 6 5 4 3 2 1 q1 q6 q3 q2 clk cy cle no. external internal cke dqm dq open ( 2 ) 7 6 5 4 3 2 1 q1 q6 q3 q2 clk cy cle no. external internal cke dqm dq q5 q4 ( 3 ) q4 clk clk clk www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 42 - revision a 0 1 12. package specification 12.1 86l tsop (ii) - 400 mil seating plane e d a2 a1 a b zd 1 43 86 44 e h e y l c l1 q zd 0.61 0.024 0.002 0.007 max. min. nom. a2 b a a1 0.17 1.00 0.05 0.27 1.20 0.15 sym. dimension (mm) max. min. nom. e 0.50 0.020 0.016 l 0.40 0.50 0.60 0.020 0.024 0.396 e 10.06 10.16 10.26 0.400 0.404 0.871 d 22.22 22.12 22.62 0.875 0.905 0.039 0.011 0.047 0.006 dimension (inch) l1 0.80 0.032 c 0.12 0.005 0.455 11.76 11.56 11.96 0.463 0.471 h e y 0.10 0.004 controlling dimension: millimeters 0.21 0.008 www.datasheet.co.kr datasheet pdf - http://www..net/
W9864G2JH publication release date: dec. 01 , 2011 - 43 - revision a 0 1 13. revision histor y v ersion d ate p age d escription a 0 1 dec. 01 , 2011 all initial formal data shee t important notice winbond products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, comb ustion control instruments, or for other applications intended to support or sustain life. further more, winbond products are not intended for applications wherein failure of winbond products could result or lead to a situation wherein personal injury, dea th or severe property or environmental damage could occur. winbond customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify winbond for any damages resulting from such improper use or sales . www.datasheet.co.kr datasheet pdf - http://www..net/

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